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| High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE(sat) typ = 2.2 V C G G C TO-220 AB G C E C (TAB) E IXDP 20N60B E IXDP 20N60B D1 G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp =1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = 600 V, TJ = 125C RG = 22 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 600 600 20 30 32 20 40 ICM = 60 VCEK < VCES 10 140 50 -55 ... +150 -55 ... +150 300 0.4 - 0.6 2 V V V V A A A A Features q q q q q q q q q NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages s W W Typical Applications C q q q Space savings High power density C C Nm g q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3 TJ = 25C TJ = 125C 0.7 5 V V V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 0.4 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 20 A, VGE = 15 V 0.1 mA mA 500 nA 2.2 2.8 V 021 (c) 2000 IXYS All rights reserved 1-4 IXDP 20N60 B IXDP 20N60 BD1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VGE = 15 V, VCE = 480 V 85 50 70 25 Inductive load, TJ = 125C IC = 20 A, VGE = 15 V, VCE = 300 V, RG = 22 W 30 260 55 0.9 0.4 Package with heatsink compound 0.5 pF pF pF nC ns ns ns ns mJ mJ 0.9 K/W K/W Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-220 AB Outline Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr trr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.1 1.6 2.4 V V A A A ns ns 2.5 K/W IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 10 A, -diF/dt = 400 A/s, VR = 300 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 25 15 11 80 40 (c) 2000 IXYS All rights reserved 2-4 IXDP 20N60 B IXDP 20N60 BD1 40 A IC VGE= 17V 15V 13V 11V 9V 40 A IC 30 VGE= 17V 15V 13V 11V 9V 30 20 20 10 TJ = 25C 10 TJ = 125C 0 0 1 2 3 VCE 0 4 V 5 0 1 2 3 VCE 4 V 5 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 40 A IC 40 A IF 30 30 20 20 TJ = 125C TJ = 25C 10 TJ = 125C TJ = 25C VCE = 20V 10 0 3 4 5 6 7 VGE 0 8 9 V 10 0 1 2 VF V 3 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 30 trr IRM 15 V 120 ns trr 12 VGE A 25 IRM 20 9 15 6 10 3 0 0 20 40 60 QG VCE = 480V IC = 15A 80 40 TJ = 125C VR = 300V IF = 10A IXDP20N06B 5 0 0 80 nC 100 0 200 400 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDP 20N60 B IXDP 20N60 BD1 1.5 mJ Eon 75 ns 50 td(on) t VCE = 300V VGE = 15V RG = 22W TJ = 125C Eon 0.8 mJ Eoff 0.6 td(off) 400 ns 300 t 200 VCE = 300V VGE = 15V RG = 22W TJ = 125C 1.0 0.4 25 0.5 tr Eoff 0.2 tf 100 0.0 0 10 20 IC 0 0.0 0 10 20 IC 0 30 A 30 A Fig. 7 Typ. turn on energy and switching times versus collector current 1.2 mJ Eon 1.0 td(on) tr Eon 20 VCE = 300V VGE = 15V IC = 20A TJ = 125C Fig. 8 Typ. turn off energy and switching times versus collector current 1.00 mJ t VCE = 300V VGE = 15V IC = 20A TJ = 125C 40 ns 30 800 td(off) ns 600 Eoff t 0.75 Eoff 0.50 0.8 400 0.6 10 0.25 tf 200 0.4 0 10 20 30 40 RG 50 60 W 0 70 0.00 0 10 20 30 40 RG 50 60 W 70 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 A ICM RG = 22W TJ = 125C Fig.10 Typ. turn off energy and switching times versus gate resistor 5 K/W 1 ZthJC 0.1 diode 60 IGBT 40 20 0.01 single pulse 0 0 100 200 300 400 500 600 700 V VCE 0.001 10-5 IXDP20N06B 10-4 10-3 10-2 10-1 t 100 s 101 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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